PART |
Description |
Maker |
BDX88C BDX87C -BDX87C |
Complemetary Silicon Power Darlington Transistors(???杈炬?椤挎?浣??) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA Standard Rectifier (trr more than 500ns) N/A SILICON POWER RECTIFIER
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MICROSEMI CORP-LAWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
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ONSEMI[ON Semiconductor]
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PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 Replacement with:PBY272R
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Diotec Semiconductor AG DIOTEC[Diotec Semiconductor] Diotec Elektronische
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1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns) SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
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Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 |
Silicon Power Rectifier 70 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB Silicon Power Rectifier 70 A, 1400 V, SILICON, RECTIFIER DIODE, DO-203AB Silicon Power Rectifier 70 A, 1600 V, SILICON, RECTIFIER DIODE, DO-203AB
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
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NEC[NEC]
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MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
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Motorola, Inc. ONSEMI[ON Semiconductor]
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